NCP3020ADR2G datasheet(4/23 Pages) ONSEMI

Part #	NCP3020ADR2G

Description	Synchronous PWM Controller

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP3020A, NCP3020B

http://onsemi.com

4

ELECTRICAL CHARACTERISTICS (−40°C < TJ < +125°C, VCC = 12 V, for min/max values unless otherwise noted)

Characteristic

Conditions

Min

Typ

Max

Unit

Input Voltage Range

−

4.5

28

V

SUPPLY CURRENT

VCC Supply Current

NCP3020A

VFB = 0.55 V, Switching, VCC = 4.5 V

−

5.1

8.0

mA

VFB = 0.55 V, Switching, VCC = 28 V

−

6.2

11

mA

VCC Supply Current

NCP3020B

VFB = 0.55 V, Switching, VCC = 4.5 V

−

6.8

TBD

mA

VFB = 0.55 V, Switching, VCC = 28 V

−

8.3

TBD

mA

UNDER VOLTAGE LOCKOUT

UVLO Rising Threshold

VCC Rising Edge

4.0

4.3

4.7

V

UVLO Falling Threshold

VCC Falling Edge

3.5

3.9

4.3

V

OSCILLATOR

Oscillator Frequency

NCP3020A

TJ = +25°C, 4.5 V v VCC v 28 V

250

300

350

kHz

TJ = −40°C to +125°C, 4.5 V v VCC v 28 V

240

300

360

kHz

Oscillator Frequency

NCP3020B

TJ = +25°C, 4.5 V v VCC v 28 V

TBD

600

TBD

kHz

TJ = −40°C to +125°C, 4.5 V v VCC v 28 V

TBD

600

TBD

kHz

Ramp−Amplitude Voltage

Vpeak − Valley

−

1.5

−

V

Ramp Valley Voltage

0.46

0.71

0.85

V

PWM

Minimum Duty Cycle

(Note 7)

−

7.0

−

%

Maximum Duty Cycle

80

84

−

%

Soft Start Ramp Time

NCP3020A

NCP3020B

VFB = VCOMP

−

6.8

3.4

−

ms

ERROR AMPLIFIER (GM)

Transconductance

0.9

1.3

1.7

mS

Open Loop dc Gain

(Notes 7 and 9)

−

70

−

dB

Output Source Current

VFB = 545 mV

45

70

100

mA

Output Sink Current

VFB = 655 mV

45

70

100

mA

FB Input Bias Current

−

0.5

500

nA

Feedback Voltage

TJ = 25 C

4.5 V < VIN < 28 V, −40°C < TJ < +125°C

0.594

0.588

0.6

0.606

0.612

V

COMP High Voltage

VFB = 0 V

4.0

4.4

5.0

V

COMP Low Voltage

VFB = 2 V

−

65

200

mV

OUTPUT VOLTAGE FAULTS

Feedback OOV Threshold

0.68

0.75

0.82

V

Feedback OUV Threshold

0.42

0.45

0.48

V

OVERCURRENT

ISET Source Current

TBD

12.5

TBD

mA

Current Limit Set Voltage (Note 8)

RSET = 22.5 kW

TBD

298

TBD

mV

7. Guaranteed by design.

8. The voltage sensed across the high side MOSFET during conduction.

9. This assumes 100 pF capacitance to ground on the COMP Pin and a typical internal Ro of > 10 MW.

10.This is not a protection feature.

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