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ULN2003A Datasheet(PDF) 3 Page - ON Semiconductor

Part No. ULN2003A
Description  High Voltage, High Current Darlington Transistor Arrays
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ULN2003A Datasheet(HTML) 3 Page - ON Semiconductor

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ULN2003A, ULQ2003A
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Leakage Current
(VO = 50 V, TA = +85°C)
(VO = 50 V, TA = +25°C)
ICEX
-
-
-
-
100
50
mA
Collector-Emitter Saturation Voltage
(IC = 350 mA, IB = 500 mA)
(IC = 200 mA, IB = 350 mA)
(IC = 100 mA, IB = 250 mA)
VCE(sat)
-
-
-
1.1
0.95
0.85
1.6
1.3
1.1
V
Input Current - On Condition
(VI = 3.85 V)
II(on)
-
0.93
1.35
mA
Input Voltage - On Condition
(VCE = 2.0 V, IC = 200 mA)
(VCE = 2.0 V, IC = 250 mA)
(VCE = 2.0 V, IC = 300 mA)
VI(on)
-
-
-
-
-
-
2.4
2.7
3.0
V
Input Current - Off Condition
(IC = 500 mA, TA = 85°C)
II(off)
50
100
-
mA
DC Current Gain
(VCE = 2.0 V, IC = 350 mA)
hFE
1000
-
-
-
Input Capacitance
CI
-
15
30
pF
Turn-On Delay Time
(50% EI to 50% EO)
ton
-
0.25
1.0
ms
Turn-Off Delay Time
(50% EI to 50% EO)
toff
-
0.25
1.0
ms
Clamp Diode Leakage Current
(VR = 50 V)
TA = +25°C
TA = +85°C
IR
-
-
-
-
50
100
mA
Clamp Diode Forward Voltage
(IF = 350 mA)
VF
-
1.5
2.0
V


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