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TC551001BTRL-85L Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TC551001BTRL-85L Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 13 page SR01020795 Static RAM TC551001BPL/BFL/BFTL/BTRL-70L/85L TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC . 3 * -3.0V at pulse width of 50ns Max. DC and Operating Characteristics (Ta = 0 ~ 70ºC, VDD = 5V±10%) Note: (1) In standby mode with CE1 ≥ V DD - 0.2V, these specification limits are guaranteed under the condition of CE2 ≥ VDD - 0.2V or CE2 ≤ 0.2V. Note: This parameter is periodically sampled and is not 100% tested. DC Recommended Operating Conditions SYMBOL PARAMETER MIN. TYP. MAX. UNIT VDD Power Supply Voltage 4.5 5.0 5.5 V VIH Input High Voltage 2.2 – VDD + 0.3 VIL Input Low Voltage -0.3* – 0.8 VDH Data Retention Supply Voltage 2.0 – 5.5 SYMBOL PARAMETER TEST CONDITION MIN. TYP. MAX. UNIT ILI Input Leakage Current VIN = 0 ~ VDD – – ±1.0 µA ILO Output Leakage Current CE1 = VIH or CE2 = VIL or R/W = VIL or OE = VIH, VOUT = 0 ~ VDD – – ±1.0 µA IOH Output High Current VOH = 2.4V -1.0 – – mA IOL Output Low Current VOL = 0.4V 4.0 – – mA IDDO1 Operating Current CE1 = VIL and CE2 = VIH and R/W = VIH, IOUT = 0mA Other Inputs = VIH/VIL tcycle Min. – – 70 mA 1 µs – – 20 IDDO2 CE1 = 0.2V and CE2 = VDD - 0.2V R/W = VDD - 0.2V IOUT = 0mA Other Inputs = VDD - 0.2V/0.2V tcycle Min. – – 60 1 µs – – 10 IDDS1 Standby Current CE1 = VIH or CE2 = VIL – – 3 mA IDDS2 (1) CE1 = VDD - 0.2V or CE2 = 0.2V VDD = 2.0V ~ 5.5V Ta = 0 ~ 70 °C – – 30 µA Ta = 25 °C – 2 4 Capacitance (Ta = 25ºC, f = 1MHz) SYMBOL PARAMETER TEST CONDITION MAX. UNIT CIN Input Capacitance VIN = GND 10 pF COUT Output Capacitance VOUT = GND 10 |
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