TIC225C datasheet(2/3 Pages) COMSET

Part #	TIC225C

Description	SILICON BIDIRECTIONAL TRIODE THYRISTOR

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Manufacturer	COMSET [Comset Semiconductor]

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2 / 3 page

TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M,

TIC225N, TIC225S

Page 2 of 3

SEMICONDUCTORS

Notes:

1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal

1.

2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate

linearly to 110°C case temperature at the rate of 200 mA/°C.

3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated

value of on-state current. Surge may be repeated after the device has returned to original thermal

equilibrium. During the surge, gate control may be lost.

4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated

value of on-state current. Surge may be repeated after the device has returned to original thermal

equilibrium. During the surge, gate control may be lost.

5. This value applies for a maximum averaging time of 20 ms.

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R∂JC

Junction to case thermal resistance

≤ 2.5

R∂JA

Junction to free air thermal resistance

≤ 62.5

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

IDRM

Repetitive peak off-

state current

VD = Rated VDRM, , IG = 0,

TC = 110°C

-

±2

mA

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

0.8

5

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

-4.5

-20

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

-3.5

-10

IGT

Gate trigger current

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

11.7

30

mA

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

0.7

2

Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

-0.8

-2

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

-0.8

-2

VGT

Gate trigger voltage

Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs

-

0.9

2

V

Vsupply = +12 V†, IG = 0,

initiating ITM = 100 mA

-

3

20

IH

Holding current

Vsupply = -12 V†, IG = 0,

initiating ITM = -100 mA

-

-4.7

-20

mA

Vsupply = +12 V† (seeNote7)

-

30

IL

Latching current

Vsupply = -12 V† (seeNote7)

-

-30

mA

VTM

Peak on-state voltage

ITM = ± 12 A, IG = 50 mA (see Note6)

-

±1.6

±2.1

V

dv/dt

Critical rate of rise of

off-state voltage

VDRM = Rated VDRM, IG = 0

TC = 110°C

-

±50

-

dv/dt©

Critical rise of

communication voltage

VDRM = Rated VDRM, ITRM = ± 12A

TC = 70°C

±1

±1.5

±4.5

V/µs

† All voltages are whit respect to Main Terminal 1.

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