APT60DF100HJ datasheet(2/4 Pages) MICROSEMI

Part #	APT60DF100HJ

Description	ISOTOP Fast Diode Full Bridge Power Module

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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APT60DF100HJ

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

IF = 60A

2.2

2.8

IF = 120A

2.7

VF

Diode Forward Voltage

IF = 60A

Tj = 125°C

1.7

V

Tj = 25°C

100

IRM

Maximum Reverse Leakage Current

VR = 1000V

Tj = 125°C

500

µA

CT

Junction Capacitance

VR = 200V

80

pF

Dynamic Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Tj = 25°C

235

trr

Reverse Recovery Time

Tj = 125°C

285

ns

Tj = 25°C

445

Qrr

Reverse Recovery Charge

Tj = 125°C

2290

nC

Tj = 25°C

5

IRRM

Reverse Recovery Current

IF = 60A

VR = 667V

di/dt = 200A/µs

Tj = 125°C

13

A

trr

Reverse Recovery Time

125

ns

Qrr

Reverse Recovery Charge

4170

nC

IRRM

Reverse Recovery Current

IF = 60A

VR = 667V

di/dt=1000A/µs

Tj = 125°C

50

A

Thermal and package characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

RthJC

Junction to Case Thermal resistance

0.9

RthJA

Junction to Ambient

20

°C/W

VISOL

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

TJ,TSTG

Storage Temperature Range

-55

175

TL

Max Lead Temp for Soldering:0.063” from case for 10 sec

300

°C

Torque

Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)

1.5

N.m

Wt

Package Weight

29.2

g

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APT60DF100HJ Datasheet(PDF) 2 Page - Microsemi Corporation

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