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APTML10UM09R004T1AG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTML10UM09R004T1AG Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 3 page  APTML10UM09R004T1AG www.microsemi.com 2 – 3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C 500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 69.5A 9 10 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 2 4 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 9875 Coss Output Capacitance 3940 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 1470 pF Shunt Electrical Characteristics Symbol Characteristic Min Typ Max Unit Rsh Resistance value 4.4 m Ω Tsh Tolerance 2 % TC=25°C 20 Psh Load capacity TC=80°C 10 W TC=25°C 67 Ish Current capacity TC=80°C 47 A Temperature sensor PTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 1980 2020 Ω R100/R25 Resistance ratio Tamb=100°C & 25°C 1.676 1.696 1.716 R-55/R25 Resistance ratio Tamb=-55°C & 25°C 0.48 0.49 0.50 B Temperature coefficient 7900 ppm/K Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal Resistance MOSFET 0.26 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 °C Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 80 g |
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