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TPS650731RSLR Datasheet(PDF) 5 Page - Texas Instruments |
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TPS650731RSLR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 90 page TPS65070, TPS65072, TPS65073 TPS650731, TPS650732 www.ti.com SLVS950B – JULY 2009 – REVISED DECEMBER 2009 DCDC1 CONVERTER PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VVINDCDC1 Input voltage range Connected to SYS pin 2.8 6.3 V IO Maximum output 600 mA VINDCDC1 = 2.8 V 150 300 RDS(ON) High side MOSFET on-resistance m Ω VINDCDC1 = 3.5 V 120 200 ILH High side MOSFET leakage current VINDCDC1 = 6.3 V 2 μA VINDCDC1 = 2.8 V 200 300 RDS(ON) Low side MOSFET on-resistance m Ω VINDCDC1 = 3.5 V 160 180 ILL Low side MOSFET leakage current VDS = 6.3 V 1 μA for TPS65072, TPS65073, TPS650731, ILIMF Forward current limit (high and low side MOSFET) 0.8 1.1 1.5 A TPS650732 ILIMF Forward current limit (high and low side MOSFET) for TPS65070 1.1 1.6 2.2 A fS Oscillator frequency 1.95 2.25 2.55 MHz Fixed output voltage range 0.725 3.3 V Internal resistor divider, I2C selectable For TPS65070, TPS65072 3.3 Default output voltage V For TPS65073, TPS650731, TPS650732 1.8 Vout VINDCDC1 = VDCDC1 +0.3 V to 6.3 V; DC output voltage accuracy; PFM mode(1) –2% 3% 0 mA ≤ IO ≤ 0.6 A VINDCDC1 = VDCDC1 +0.3 V to 6.3 V; DC output voltage accuracy; PWM mode(1) –1.5% 1.5% 0 mA ≤ IO ≤ 0.6 A ΔVOUT Power save mode ripple voltage(2) IOUT = 1 mA, PFM mode 40 mVpp tStart Start-up time Time from active EN to Start switching 170 μs tRamp VOUT ramp up time Time to ramp from 5% to 95% of VOUT 250 μs Vo - power good threshold rising voltage 5% Vo - power good threshold falling voltage 10% RDIS Internal discharge resistor at L1 –35% 250 35% Ω (1) Output voltage specification does not include tolerance of external voltage programming resistors. Output voltage in PFM mode is scaled to +1% of nominal value. (2) Configuration L= 2.2 μH, COUT = 10 μF DCDC2 CONVERTER PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VVINDCDC Input voltage range Connected to SYS pin 2.8 6.3 V 2 TPS65072/73/731/732 600 IO Maximum output current Vin > 2.8 V mA TPS65070 1500 VINDCDC2 = 2.8 V 150 300 RDS(ON) High side MOSFET on-resistance m Ω VINDCDC2 = 3.5 V 120 200 ILH High side MOSFET leakage current VINDCDC2 = 6.3 V 2 μA VINDCDC2 = 2.8 V 200 300 RDS(ON) Low side MOSFET on-resistance m Ω VINDCDC2 = 3.5 V 160 180 ILL Low side MOSFET leakage current VDS = 6.3 V 1 μA TPS65072/73/731/732 Forward current limit (high- and low-side 0.8 1.1 1.5 ILIMF 2.8 V < VINDCDC2 < 6.3 V A MOSFET) TPS65070 2.1 2.4 3.5 fS Oscillator frequency 1.95 2.25 2.55 MHz Vout Adjustable output voltage range External resistor divider 0.6 Vin V Vref Reference voltage 600 mV Internal resistor divider, I2C Vout Fixed output voltage range 0.725 3.3 V selectable (Default setting) Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): TPS65070 TPS65072 TPS65073 TPS650731, TPS650732 |
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