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TSA1036 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSA1036 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSA1036 General Purpose PNP Transistor 1/4 Version: A09 SOT-23 PRODUCT SUMMARY BVCBO -60V BVCEO -60V IC -0.6A VCE(SAT) -0.4V @ IC / IB = -150mA / -15mA Features ● Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA ● Complementary part with TSC2411 Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Ordering Information Part No. Package Packing TSA1036CX RF SOT-23 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -0.6 A Collector Power Dissipation PD 225 mW Thermal Resistance, Junction to Ambient RθJA 556 oC/W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw≤350us, Duty≤2% Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -10uA, IE = 0 BVCBO -60 -- -- V Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 BVCEO -60 -- -- V Emitter-Base Breakdown Voltage IE = -10uA, IC = 0 BVEBO -5 -- -- V Collector Cutoff Current VCB = -50V, IE = 0 ICBO -- -- -10 nA Emitter Cutoff Current VEB = -0.5V, IC = 0 IEBO -- -- -50 nA Collector-Emitter Saturation Voltage IC / IB = -150mA / -15mA *VCE(SAT) -- -- -0.4 V Base-Emitter Saturation Voltage IC / IB = -500mA / -50mA *VBE(SAT) -- -- -1.3 V VCE = -10V, IC = -0.1A *hFE 1 75 -- -- DC Current Transfer Ratio VCE = -10V, IC = -150mA *hFE 2 100 -- 300 Transition Frequency VCE =-5V, IC=-50mA, f=100MHz fT 200 -- -- MHz Output Capacitance VCB = -10V, f=1MHz Cob -- -- 8 pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Base 2. Emitter 3. Collector |
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