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TSC2411 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC2411 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSC2411 General Purpose NPN Transistor 1/4 Version: A09 SOT-23 PRODUCT SUMMARY BVCEO 40V BVCBO 75V IC 600mA VCE(SAT) 0.5V @ IC / IB = 380mA / 10mA Features ● Driver Stage of AF Amplifier ● General Purpose Switching Application Structure ● Epitaxial Planar Type ● Complementary to TSA1036CX Ordering Information Part No. Package Packing TSC2411CX RF SOT-23 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Power Dissipation PD 225 mW Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw=20ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 10uA, IE = 0 BVCBO 75 -- -- V Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 BVCEO 40 -- -- V Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 BVEBO 6 -- -- V Collector Cutoff Current VCB = 60V, IE = 0 ICBO -- -- 0.1 uA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- 0.1 uA Collector-Emitter Saturation Voltage IC / IB = 380mA / 10mA VCE(SAT) 1 -- 0.2 0.5 V Collector-Emitter Saturation Voltage IC / IB = 150mA / 15mA VCE(SAT) 2 -- 0.2 0.4 V Collector-Emitter Saturation Voltage IC / IB = 500mA / 50mA VCE(SAT) 3 -- 0.45 0.75 V Base-Emitter Saturation Voltage IC / IB = 150mA / 15mA VBE(SAT) 1 0.75 -- 0.95 V Base-Emitter Saturation Voltage IC / IB = 500mA / 50mA VBE(SAT) 2 -- -- 1.2 V DC Current Transfer Ratio VCE = 1V, IC = 150mA hFE 82 -- 390 Transition Frequency VCE =5V, IC=-20mA, f=100MHz fT 300 -- -- MHz Output Capacitance VCB = 5V, f=1MHz Cob -- 6 -- pF Pin Definition: 1. Base 2. Emitter 3. Collector |
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