PESDXS2UQ_SER_4

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 04 — 26 January 2010

3 of 13

NXP Semiconductors

PESDxS2UQ series

Double ESD protection diodes in SOT663 package

5.

Limiting values

[1]

Non-repetitive current pulse 8/20

μs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured across either pins 1 and 3 or pins 2 and 3.

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

Measured across either pins 1 and 3 or pins 2 and 3.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

peak pulse power

[1][2] -150

W

peak pulse current

[1][2]

PESD3V3S2UQ

-

15

A

PESD5V0S2UQ

-

15

A

PESD12VS2UQ

-

5

A

PESD15VS2UQ

-

5

A

PESD24VS2UQ

-

3

A

Per device

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

electrostatic discharge

voltage

IEC 61000-4-2

(contact discharge)

[1][2]

PESD3V3S2UQ

-

30

kV

PESD5V0S2UQ

-

30

kV

PESD12VS2UQ

-

30

kV

PESD15VS2UQ

-

30

kV

PESD24VS2UQ

-

23

kV

PESDxS2UQ series

MIL-STD-883

(human body model)

-10

kV

Table 7.

ESD standards compliance

Standard

Conditions

Per diode

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model)

> 4 kV