TC74VHCT9273FK datasheet(4/9 Pages) TOSHIBA

Part #	TC74VHCT9273FK

Description	CMOS Digital Integrated Circuit Silicon Monolithic

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 9 page

TC74VHCT9273P/FT/FK

2009-07-01

4

Electrical Characteristics

DC Characteristics

Test Condition

Ta = 25°C

Ta = −40 to 85°C

Characteristics

Symbol

VCC

(V)

Min

Typ.

Max

Min

Max

Unit

High-level input

voltage

VIH

―

4.5

5.5

―

1.90

2.10

―

1.90

2.10

Low-level input

voltage

VIL

―

4.5

5.5

0.50

0.60

―

0.50

0.60

―

V

Hysteresis voltage

(CK、 CLR )

VH

―

4.5

5.5

0.40

―

1.40

1.50

0.40

1.40

1.50

V

IOH = −50 μA

4.5

4.4

4.5

―

4.4

―

High-level output

voltage

VOH

VIN

= VIL

IOH = −8 mA

4.5

3.94

―

3.80

―

IOL = 50 μA

4.5

―

0.0

0.1

―

0.1

Low-level output

voltage

VOL

VIN

= VIH

IOL = 8 mA

4.5

―

0.36

―

0.44

V

Input leakage current

IIN

VIN = 5.5 V or GND

0~

5.5

―

±0.1

―

±1.0

μA

ICC

VIN = VCC or GND

5.5

―

2.0

―

20.0

μA

Quiescent supply

current

ICCT

Per input: VIN = 3.4 V

Other input: VCC or GND

5.5

―

1.35

―

1.50

mA

Timing Requirements (input: tr = tf = 3 ns)

Test Condition

Ta = 25°C

Ta

=

−40 to

85°C

Characteristics

Symbol

VCC (V)

Typ.

Limit

Unit

Minimum pulse width (CK)

tw (L)

tw (H)

―

5.0 ± 0.5

―

5.0

ns

Minimum pulse width (

CLR )

tw (L)

―

5.0 ± 0.5

―

5.0

ns

Minimum set-up time

ts

―

5.0 ± 0.5

―

4.5

ns

Minimum hold time

th

―

5.0 ± 0.5

―

1.0

ns

Minimum removal time ( CLR )

trem

―

5.0 ± 0.5

―

2.0

ns

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TC74VHCT9273FK Datasheet(PDF) 4 Page - Toshiba Semiconductor

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