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HMT112S6TFR8A-H9 Datasheet(PDF) 3 Page - Hynix Semiconductor |
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HMT112S6TFR8A-H9 Datasheet(HTML) 3 Page - Hynix Semiconductor |
3 / 50 page Rev. 0.1 / Feb. 2010 3 Description Hynix Unbuffered DDR3L SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3L SDRAM devices. These Unbuffered DDR3L SDRAM DIMMs are intended for use as main memory when installed in systems such as mobile personal computers. Features * This product is in compliance with the RoHS directive. Ordering Information Part Number Density Organization Component Composition # of ranks HMT112S6TFR8A-G7/H9 1GB 128Mx64 128Mx8(H5TC1G83TFR)*8 1 HMT125S6TFR8A-G7/H9 2GB 256Mx64 128Mx8(H5TC1G83TFR)*16 2 • Power Supply: VDD=1.35V (1.283V to 1.45V) • VDDQ = 1.35V (1.283V to 1.45V) • VDDSPD=3.0V to 3.6V • Functionality and operations comply with the DDR3 SDRAM datasheet • 8 internal banks • Data transfer rates: PC3-10600, PC3-8500, or PC3-6400 • Bi-directional Differential Data Strobe • 8 bit pre-fetch • Burst Length (BL) switch on-the-fly: BL 8 or BC (Burst Chop) 4 • On Die Termination (ODT) supported • RoHS compliant |
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