PSB 51

POWERSEM GmbH, Walpersdorfer Str. 53

 2005 POWERSEM reserves the right to change limits, test conditions and dimensions

91126 D- Schwabach

Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20

T = 150°C

vj

T = 25°C

vj

2

0.5

1.5

1

V [V]

F

0

I

F

50

100

200

150

[A]

0.4

0.6

0.8

1

1.2

1.4

1.6

100

101

102

103

t[ms]

I

(A)

FSM

TVJ=45°C

TVJ=150°C

750

675

I

------

IFSM

F(OV)

0 VRRM

1/2 VRRM

1 VRRM

2

4

6

10

TVJ=45°C

TVJ=150°C

t [ms]

1

10

10

10

2

3

4

As

2

Fig. 1 Forward current versus

voltage drop per diode

Fig. 2 Surge overload current

t: duration

Fig. 3

(1-10ms) per diode (or thyristor)

50

30

10

0

25

50

75

100

125

150

175

200

85

90

95

100

105

110

115

120

125

130

135

140

145

150

TC

°C

DC

sin.180°

rec.120°

rec.60°

rec.30°

2.67

1.17

0.67

0.42

0.3 0.17

= RTHCA [K/W]

IFAVM

[A]

Tamb

[K]

0

50

100

150

[W]

PVTOT

PSB 51

Fig. 4 Power dissipation versus direct output current and ambient

temperature

50

100

150

200

0

10

20

30

40

50

60

DC

sin.180°

rec.120°

rec.60°

rec.30°

T (°C)

C

IdAV

[A]

Fig.5 Maximum forward current

at case temperature

0.01

0.1

1

10

1

2

K/W

Z th

t[s]

Z thJK

Z thJC

Fig. 6 Transient thermal impedance per diode (or thyristor),

calculated