PSBT 85

POWERSEM GmbH, Walpersdorfer Str. 53

 2003 POWERSEM reserves the right to change limits, test conditions and dimensions

91126 D- Schwabach

Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20

Symbol Test Conditions

Characteristic Value

≤

5

mA

≤

1.75

V

0.85

V

6

m

Ω

≤

1.5

V

≤

1.6

V

≤

100

mA

≤

200

mA

≤

0.2

V

≤

5

mA

≤

450

mA

≤

200

mA

≤

2

µs

150

µs

-di/dt = 10A/

per thyristor; sine 180°el

0.65

K/W

per module

0.1625

K/W

per thyristor; sine 180° el

0.8

K/W

per module

0.2

K/W

Creeping distance on surface

10.0

mm

Creeping distance in air

9.4

mm

a

Max. allowable acceleration

50

m/s

2

0.5

1

1.5

2

0

50

100

150

200

250

300

V [V]

F

IF

[A]

1:T

= 125°

VJ

2:T

= 25°

VJ

C

C

1

2

100

1

10

100

I [mA]

G

10

1000

tgd

us

T

=25°C

VJ

0.4

0.6

0.8

1

1.2

1.4

1.6

10

0

10

1

10

2

10

3

t[ms]

I

(A)

TSM

TVJ=45°C

TVJ=150°C

1150

1000

I

------

ITSM

T(OV)

0 VRRM

1/2 VRRM

1 VRRM

Fig. 1 Forward current vs.

voltage drop per diode or

thyristor

Fig. 2 Gate trigger delay time

Fig. 3 Surge overload current