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PDMB200BS12 Datasheet(PDF) 2 Page - Nihon Inter Electronics Corporation

Part # PDMB200BS12
Description  IGBT Module-Dual
Download  4 Pages
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Manufacturer  NIEC [Nihon Inter Electronics Corporation]
Direct Link  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PDMB200BS12 Datasheet(HTML) 2 Page - Nihon Inter Electronics Corporation

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QS043-402-20371（3/5）
日本インター株式会社
ＰＤＭＢ２００ＢＳ１２
ＰＤＭＢ２００ＢＳ１２Ｃ
0
4
8
121620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=100A
400A
200A
0
4
8
121620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
IC=100A
400A
TC=125°C
200A
0
200
400
600
800
1000
1200
1400
0
100
200
300
400
500
600
700
800
Total Gate Charge Qg (nC)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
0
2
4
6
8
10
12
14
16
VCE=600V
400V
200V
RL=3.0
TC=25°C
0.1
0.2
0.5
1
2
5
10
20
50
100
200
30
100
300
1000
3000
10000
30000
100000
300000
Collector to Emitter Voltage VCE (V)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25°C
01
2
3
4
5
0
50
100
150
200
250
300
350
400
Collector to Emitter Voltage VCE (V)
Fig.1- Output Characteristics (Typical)
TC=25°C
11V
10V
VGE=20V
8V
7V
12V
15V
9V
01
2
3
4
5
0
50
100
150
200
250
300
350
400
Collector to Emitter Voltage VCE (V)
Fig.2- Output Characteristics (Typical)
TC=125°C
11V
10V
VGE=20V
8V
7V
12V
15V
9V


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