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VG36128401A Datasheet(PDF) 7 Page - Vanguard International Semiconductor

Part # VG36128401A
Description  CMOS Synchronous Dynamic RAM
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Manufacturer  VML [Vanguard International Semiconductor]
Direct Link  http://www.vis.com.tw
Logo VML - Vanguard International Semiconductor

VG36128401A Datasheet(HTML) 7 Page - Vanguard International Semiconductor

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Document : 1G5-0154
Rev.1
Page 7
VIS
VG36128401A
Preliminary
VG36128801A
VG36128161A
CMOS Synchronous Dynamic RAM
AC Characteristics : (Ta = 0 to 70°C V DD = 3.3V 0.3V, VSS = 0V)
symbol
A.C. Parameter
-75
-8H
unit
note
Min.
Max.
Min.
Max.
tRC
Row cycle time
60
70
ns
tRCD
RAS to CAS delay
20
20
tRP
Precharge to refresh/row activate command
15
20
tRRD
Row activate to row activate delay
15
20
tRAS
Row activate to precharge time
37.5
100,000
50
100,000
tCK2
Clock cycle time
CL2
7.5
10
ns
tCK3
CL3
7.5
10
tCH
Clock high time
2.25
3
tCL
Clock low time
2.25
3
tAC2
Access time from CLK
(positive edge)
CL2
5
6
tAC3
CL3
5
6
tT
Transition time of CLK (Rise and Fall)
1
10
1
10
tCCD
CAS to CAS Delay time
1
1
CLK
tOH
Data output hold time
2.5
3
ns
tLZ
Data output low impedance
0
0
tHZ2
Data output high impedance
CL2
4
6
9
tHZ3
CL3
4
6
tIS
Data/Address/Control Input setup time
1
2
tIH
Data/Address/Control Input hold time
0.5
1
tSRX
Minimum CKE ”High”for Self-Refresh exit
1
1
CLK
tPDE
Power Down Exit set-up time
2
2
ns
tRSC
Mode Register Set Cycle
2
2
CLK
tDPL
Data-in to precharge
2
1
CLK
tDAL2
Data-in to ACT (REF) Command
CL2
2clk+tRP
1clk+tRP
ns
tDAL3
CL3
2clk+tRP
1clk+tRP
tBDL
Last data in to burst stop
1
1
CLK
tREF
Refresh time
64
64
ms
±


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