 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
bq24600RVAT Datasheet(PDF) 4 Page - Texas Instruments |
|
|
||||||||||||||||||||||||||||||
bq24600RVAT Datasheet(HTML) 4 Page - Texas Instruments |
|
|
4 / 29 page  bq24600 SLUS891 – FEBRUARY 2010 www.ti.com ELECTRICAL CHARACTERISTICS (continued) 5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CURRENT REGULATION – FAST CHARGE VISET ISET voltage range 2 V VIREG_CHG SRP-SRN current sense voltage range VIREG_CHG = VSRP – VSRN 100 mV Charge current set factor (Amps of KISET RSENSE = 10 mΩ 5 A/V charge current per volt on ISET pin) VIREG_CHG = 40 mV –3% 3% VIREG_CHG = 20 mV –4% 4% Charge current regulation accuracy VIREG_CHG = 5 mV –25% 25% VIREG_CHG = 1.5 mV (VSRN > 3.1V) –40% 40% IISET Leakage current into ISET pin VISET = 2 V 100 nA CURRENT REGULATION – PRECHARGE ICHARGE Precharge current range RSENSE = 10 mΩ A /10 Precharge current set factor (Amps of KPRECH RSENSE = 10 mΩ 0.5 A/V precharge current per volt on ISET pin) VIREG_PRECH = 10 mV –10% 10% Precharge current regulation accuracy VIREG_PRECH = 5 mV –25% 25% VIREG_PRECH = 1.5 mV (VSRN < 3.1V) –55% 55% CHARGE TERMINATION ICHARGE Termination current range RSENSE = 10 mΩ A /10 Termination current set factor (Amps of KTERM Termination current per volt on ISET RSENSE = 10 mΩ 0.5 A/V pin) VITERM = 10 mV –10% 10% Termination current accuracy VITERM = 5 mV –25% 25% VITERM = 1.5 mV –45% 45% Deglitch time for termination (both edge) 100 ms tQUAL Termination qualification time VBAT > VRECH and ICHARGE < ITERM 250 ms IQUAL Termination qualification current Discharge current once termination is detected 2 mA INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO) VUVLO AC under-voltage rising threshold Measure on VCC 3.65 3.85 4 V VUVLO_HYS AC under-voltage hysteresis, falling 350 mV VCC LOWV COMPARATOR Falling threshold, disable charge Measure on VCC 4.1 V Rising threshold, resume charge 4.35 4.5 V SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION) VSLEEP _FALL SLEEP falling threshold VVCC – VSRN to enter SLEEP 40 100 150 mV VSLEEP_HYS SLEEP hysteresis 500 mV SLEEP rising delay VCC falling below SRN, delay to pull up PG 1 µs SLEEP falling delay VCC rising above SRN, delay to pull down PG 30 ms SLEEP rising shutdown deglitch VCC falling below SRN, Delay to enter SLEEP mode 100 ms VCC rising above SRN, Delay to come out of SLEEP SLEEP falling powerup deglitch 30 ms mode BAT LOWV COMPARATOR Precharge to fastcharge transition VLOWV Measured on VFB pin 1.534 1.55 1.566 V (LOWV Threshold) VLOWV_HYS LOWV hysteresis 100 mV LOWV rising deglitch VFB falling below Vlowv 25 ms LOWV falling deglitch VFB rising above Vlowv + VLOWV_HYS 25 ms 4 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): bq24600 |
Similar Part No. - bq24600RVAT |
|
Similar Description - bq24600RVAT |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
