2SK3019

Transistor

Rev.C

1/3

2.5V Drive Nch MOS FET

2SK3019

Structure

Silicon N-channel

MOSFET

Applications

Interfacing, switching (30V, 100mA)

Features

1) Low on-resistance.

2) Fast switching speed.

3) Low voltage drive (2.5V) makes this device ideal for

portable equipment.

4) Drive circuits can be simple.

5) Parallel use is easy.

Dimensions (Unit : mm)

(1)Source

(2)Gate

(3)Drain

EMT3

1.6

0.7

0.15

0.55

0.2

1.0

0.3

(2)

0.5

0.5

(3)

0.2

(1)

Abbreviated symbol : KN

Packaging specifications

TL

3000

2SK3019

Type

Package

Code

Basic ordering unit

(pieces)

Taping

Absolute maximum ratings (Ta=25

°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Storage temperature

Tch

30

V

V

mA

mW

°C

±20

±100

Continuous

Pulsed

mA

±400

150

150

Tstg

°C

−55 to +150

Symbol

Limits

Unit

∗1 Pw≤10µs, Duty cycle≤1%

∗2 With each pin mounted on the recommended lands.

Equivalent circuit

Drain

Source

Gate

∗ Gate

Protection

Diode

and the source terminals to protect the diode

against static electricity when the product is in use.

Use a protection circuit when the fixed voltages

are exceeded.

Thermal resistance

Parameter

°C / W

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

∗ With each pin mounted on the recommended lands.

833

∗