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APTGF50DA120T1G Datasheet(PDF) 5 Page - Microsemi Corporation

Part # APTGF50DA120T1G
Description  Boost chopper NPT IGBT Power Module
Download  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF50DA120T1G Datasheet(HTML) 5 Page - Microsemi Corporation

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APTGF50DA120T1G
www.microsemi.com
5 – 6
VGE = 15V
25
30
35
40
45
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 5Ω
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
VCE = 600V
RG = 5Ω
VGE=15V
20
60
100
140
180
025
50
75
100
125
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 600V
RG = 5Ω
TJ = 25°C
TJ = 125°C
20
30
40
50
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 5Ω
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
4
8
12
16
20
24
28
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
VCE = 600V
RG = 5Ω
TJ = 25°C
TJ = 125°C
0
2
4
6
8
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 5Ω
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 25A
0
2
4
6
8
10
12
14
16
18
0
1020304050
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 25A
0
2
4
6
8
25
50
75
100
125
TJ, Junction Temperature (°C)
Switching Energy Losses vs Junction Temp.
VCE = 600V
VGE = 15V
RG = 5Ω


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