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APTGF50VDA60T3G Datasheet(PDF) 6 Page - Microsemi Corporation |
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APTGF50VDA60T3G Datasheet(HTML) 6 Page - Microsemi Corporation |
6 / 6 page APTGF50VDA60T3G www.microsemi.com 6 – 6 Cies Cres Coes 100 1000 10000 0 1020 30 4050 Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Operating Frequency vs Collector Current hard switching ZCS ZVS 0 40 80 120 160 200 240 0 2040 6080 100 IC, Collector Current (A) VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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