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APTGF500U60D4G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGF500U60D4G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APTGF500U60D4G www.microsemi.com 2- 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1 mA Tj = 25°C 1.95 2.45 VCE(sat) Collector Emitter saturation Voltage VGE = 15V IC = 600A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 9mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 1900 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 26 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 2.4 nF QG Gate charge VGE=15V, IC=600A VCE=300V 1.5 µC Td(on) Turn-on Delay Time 150 Tr Rise Time 72 Td(off) Turn-off Delay Time 530 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 600A RG = 12Ω 40 ns Td(on) Turn-on Delay Time 160 Tr Rise Time 75 Td(off) Turn-off Delay Time 550 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 600A RG = 12Ω 50 ns Eon Turn on Energy Tj = 125°C 28 mJ Eoff Turn off Energy VGE = ±15V VBus = 300V IC = 600A RG = 12Ω Tj = 125°C 26 mJ Isc Short Circuit data VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C 2700 A Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 750 IRRM Maximum Reverse Leakage Current VR = 600V Tj = 125°C 1000 µA IF DC Forward Current Tc = 80°C 600 A Tj = 25°C 1.25 1.6 VF Diode Forward Voltage IF = 600A VGE = 0V Tj = 125°C 1.2 V Tj = 25°C 150 trr Reverse Recovery Time Tj = 125°C 250 ns Tj = 25°C 36 Qrr Reverse Recovery Charge Tj = 125°C 56 µC Tj = 25°C 8 Err Reverse Recovery Energy IF = 600A VR = 300V di/dt =7000A/µs Tj = 125°C 16 mJ |
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