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APTGL325A120D3G Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTGL325A120D3G Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 5 page APTGL325A120D3G www.microsemi.com 4- 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=150°C 0 100 200 300 400 500 600 01 2 3 4 VCE (V) Output Characteristics VGE=15V VGE=19V VGE=9V 0 100 200 300 400 500 600 01 234 VCE (V) TJ = 150°C Transfert Characteristics TJ=25°C TJ=150°C 0 100 200 300 400 500 600 5 6 7 8 9 10 11 12 13 VGE (V) Energy losses vs Collector Current Eon Eoff Err 0 20 40 60 80 0 100 200 300 400 500 600 IC (A) VCE = 600V VGE = 15V RG = 1.5.Ω TJ = 150°C Eon Eoff Err 0 15 30 45 60 75 90 02.5 5 7.5 10 Gate Resistance (ohms) VCE = 600V VGE =15V IC = 300A TJ = 150°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 150 300 450 600 0 300 600 900 1200 1500 VCE (V) VGE=15V TJ=150°C RG=1.5Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) IGBT |
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