APTGT25H120T1G

www.microsemi.com

5 – 5

Forward Characteristic of diode

0

10

20

30

40

50

0

0.5

1

1.5

2

2.5

hard

switching

ZCS

ZVS

0

10

20

30

40

50

60

70

80

0

1020

304050

D=50%

Operating Frequency vs Collector Current

maximum Effective Transient Thermal Impedance, Junction to Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

Diode

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5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.