APTGT50SK170T1G

www.microsemi.com

4 – 5

Typical Performance Curve

0

20

40

60

80

100

0

0.5

1

1.5

22.533.5

4

Output Characteristics

0

20

40

60

80

100

01

2

3

45

Transfert Characteristics

0

20

40

60

80

100

56789

10

11

12

13

Energy losses vs Collector Current

Eon

Eoff

Er

0

10

20

30

40

50

0

2040

6080

100

Eon

Eoff

Er

0

10

20

30

40

50

0

10

203040

5060

7080

Gate Resistance (ohms)

Switching Energy Losses vs Gate Resistance

Reverse Bias Safe Operating Area

0

25

50

75

100

125

0

400

800

1200

1600

2000

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

IGBT