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APTGT100DA60T3AG Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGT100DA60T3AG Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 5 page APTGT100DA60T3AG www.microsemi.com 5 – 5 Forward Characteristic of diode TJ=25°C TJ=125°C TJ=150°C 0 25 50 75 100 125 150 175 200 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) Hard switching ZCS ZVS 0 25 50 75 100 25 50 75 100 125 150 IC (A) VCE=300V D=50% RG=3.3Ω TJ=150°C Tc=85°C Operating Frequency vs Collector Current Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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