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APTGT100SK60T3AG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGT100SK60T3AG Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APTGT100SK60T3AG www.microsemi.com 2 – 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 250 µA Tj = 25°C 1.5 1.9 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 100A Tj = 150°C 1.7 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 1.5 mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 6100 Coes Output Capacitance 390 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 190 pF QG Gate charge VGE= ±15V ; VCE=300V IC=100A 1.1 µC Td(on) Turn-on Delay Time 115 Tr Rise Time 45 Td(off) Turn-off Delay Time 225 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω 55 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 50 Td(off) Turn-off Delay Time 300 Tf Fall Time Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω 70 ns Tj = 25°C 0.4 Eon Turn on Energy Tj = 150°C 0.875 mJ Tj = 25°C 2.5 Eoff Turn off Energy VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω Tj = 150°C 3.5 mJ Isc Short Circuit data VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C 500 A Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 150 IRM Maximum Reverse Leakage Current VR=600V Tj = 150°C 400 µA IF DC Forward Current Tc = 100°C 100 A Tj = 25°C 1.6 2 VF Diode Forward Voltage IF = 100A VGE = 0V Tj = 150°C 1.5 V Tj = 25°C 100 trr Reverse Recovery Time Tj = 150°C 150 ns Tj = 25°C 5.1 Qrr Reverse Recovery Charge Tj = 150°C 10.7 µC Tj = 25°C 1.2 Er Reverse Recovery Energy IF = 100A VR = 300V di/dt =2500A/µs Tj = 150°C 2.4 mJ |
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