APTGT150DA120D1G

www.microsemi.com

4- 4

0

50

100

150

200

250

300

01

23

4

Output Characteristics

0

50

100

150

200

250

300

01

23

4

Transfert Characteristics

0

50

100

150

200

250

300

5678

9

10

11

12

Energy losses vs Collector Current

Eon

Eon

Eoff

Err

0

10

20

30

40

50

60

0

50

100

150

200

250

300

Eon

Eon

Eoff

Err

0

10

20

30

40

50

4

8

12

16

20

24

28

32

Gate Resistance (ohms)

Switching Energy Losses vs Gate Resistance

Reverse Bias Safe Operating Area

0

50

100

150

200

250

300

350

0

400

800

1200

1600

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.04

0.08

0.12

0.16

0.2

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

IGBT

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

and foreign patents. U.S and Foreign patents pending. All Rights Reserved.