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APTGT200DA60T3AG Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTGT200DA60T3AG
Description  Boost chopper Trench Field Stop IGBT Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGT200DA60T3AG Datasheet(HTML) 1 Page - Microsemi Corporation

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APTGT200DA60T3AG
www.microsemi.com
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29
30
28 27 26
3
32
31
10
19
2
25
4
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
290
IC
Continuous Collector Current
TC = 100°C
200
ICM
Pulsed Collector Current
TC = 25°C
400
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
750
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
400A @ 550V
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Boost chopper
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 200A @ Tc = 100°C


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