APTGV25H120BG

www.microsemi.com

7-14

6. Full bridge top switches curves

6.1 Top Trench + Field Stop IGBT typical performance curves

0

10

20

30

40

50

0

0.5

11.5

22.5

33.5

Output Characteristics

0

10

20

30

40

50

01

23

4

Transfert Characteristics

0

10

20

30

40

50

56

78

9

10

11

12

Energy losses vs Collector Current

Eon

Eon

Eoff

0

1

2

3

4

5

6

0

1020

3040

50

Eon

Eon

Eoff

0

1

2

3

4

5

6

7

8

0

40

80

120

160

200

Gate Resistance (ohms)

Switching Energy Losses vs Gate Resistance

Reverse Bias Safe Operating Area

0

10

20

30

40

50

60

0

300

600

900

1200

1500

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)