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APTGV25H120BG Datasheet(PDF) 7 Page - Microsemi Corporation |
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APTGV25H120BG Datasheet(HTML) 7 Page - Microsemi Corporation |
7 / 14 page APTGV25H120BG www.microsemi.com 7-14 6. Full bridge top switches curves 6.1 Top Trench + Field Stop IGBT typical performance curves Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 0 10 20 30 40 50 0 0.5 11.5 22.5 33.5 VCE (V) Output Characteristics VGE=15V VGE=13V VGE=17V VGE=9V 0 10 20 30 40 50 01 23 4 VCE (V) TJ = 125°C Transfert Characteristics TJ=25°C TJ=25°C TJ=125°C 0 10 20 30 40 50 56 78 9 10 11 12 VGE (V) Energy losses vs Collector Current Eon Eon Eoff 0 1 2 3 4 5 6 0 1020 3040 50 IC (A) VCE = 600V VGE = 15V RG = 27Ω TJ = 125°C Eon Eon Eoff 0 1 2 3 4 5 6 7 8 0 40 80 120 160 200 Gate Resistance (ohms) VCE = 600V VGE =15V IC = 25A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 10 20 30 40 50 60 0 300 600 900 1200 1500 VCE (V) VGE=15V TJ=125°C RG=27Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) |
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