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APTGV75H60T3G Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APTGV75H60T3G
Description  Full - Bridge NPT & Trench Field Stop짰 IGBT Power module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGV75H60T3G Datasheet(HTML) 4 Page - Microsemi Corporation

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APTGV75H60T3G
www.microsemi.com
4-9
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
2700
Coes
Output Capacitance
386
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
240
pF
Qg
Total gate Charge
198
Qge
Gate – Emitter Charge
20
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC =60A
120
nC
Td(on)
Turn-on Delay Time
30
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
80
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 60A
RG = 3.3Ω
15
ns
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
90
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 60A
RG = 3.3Ω
21
ns
Eon
Turn-on Switching Energy
Tj = 125°C
0.6
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 60A
RG = 3.3Ω
Tj = 125°C
1.6
mJ
RthJC
Junction to Case Thermal resistance
0.45
°C/W
2.2 Bottom diode characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 80°C
30
A
IF = 30A
1.6
1.8
IF = 60A
1.9
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.4
V
Tj = 25°C
85
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
130
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 125°C
700
nC
RthJC
Junction to Case Thermal resistance
1.2
°C/W
3. Temperature sensor
NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
B 25/85
T25 = 298.15 K
3952
K


−
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
T: Thermistor temperature
RT: Thermistor value at T


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