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APTGV100H60BTPG Datasheet(PDF) 6 Page - Microsemi Corporation |
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APTGV100H60BTPG Datasheet(HTML) 6 Page - Microsemi Corporation |
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6 / 15 page  APTGV100H60BTPG www.microsemi.com 6-15 3.2 Chopper diode characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 100 A IF = 100A 1.6 2 IF = 200A 2 VF Diode Forward Voltage IF = 100A Tj = 125°C 1.3 V Tj = 25°C 160 trr Reverse Recovery Time Tj = 125°C 220 ns Tj = 25°C 290 Qrr Reverse Recovery Charge IF = 100A VR = 400V di/dt =200A/µs Tj = 125°C 1530 nC RthJC Junction to Case Thermal resistance 0.55 °C/W 4. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 k Ω B 25/85 T25 = 298.15 K 3952 K − = T T B R R T 1 1 exp 25 85 / 25 25 T: Thermistor temperature RT: Thermistor value at T |
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