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APTM10DHM09T3G Datasheet(PDF) 6 Page - Microsemi Corporation |
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APTM10DHM09T3G Datasheet(HTML) 6 Page - Microsemi Corporation |
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6 / 7 page  APTM10DHM09T3G www.microsemi.com 6 – 7 Delay Times vs Current td(on) td(off) 0 20 40 60 80 100 120 0 50 100 150 200 250 ID, Drain Current (A) VDS=66V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 ID, Drain Current (A) VDS=66V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eon Eoff 0 0.5 1 1.5 0 50 100 150 200 250 ID, Drain Current (A) VDS=66V RG=5Ω TJ=125°C L=100µH Eon Eoff 0 0.5 1 1.5 2 2.5 0 102030 405060 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=66V ID=139A TJ=125°C L=100µH Hard switching ZVS ZCS 0 50 100 150 200 250 300 25 50 75 100 125 150 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=66V D=50% RG=5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage |
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