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APTM100DA40T1G Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTM100DA40T1G Datasheet(HTML) 4 Page - Microsemi Corporation |
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4 / 5 page  APTM100DA40T1G www.microsemi.com 4 – 5 Low Voltage Output Characteristics TJ=25°C TJ=125°C 0 10 20 30 40 50 0 5 10 15 20 VDS, Drain to Source Voltage (V) VGS=10V Low Voltage Output Characteristics 4.5V 5V 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) TJ=125°C VGS=6, 7, 8 & 9V Normalized RDSon vs. Temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID=16A Transfert Characteristics TJ=25°C TJ=125°C 0 5 10 15 20 25 30 35 0123 4 567 VGS, Gate to Source Voltage (V) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle Ciss Crss Coss 1 10 100 1000 10000 100000 0 50 100 150 200 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source VDS=200V VDS=500V VDS=800V 0 2 4 6 8 10 12 0 40 80 120 160 200 240 280 Gate Charge (nC) VGS=10V ID=16A |
Similar Part No. - APTM100DA40T1G |
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Similar Description - APTM100DA40T1G |
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