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APTM120H140FT1G Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTM120H140FT1G Datasheet(HTML) 4 Page - Microsemi Corporation |
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4 / 5 page  APTM120H140FT1G www.microsemi.com 4 – 5 Typical Performance Curve Low Voltage Output Characteristics TJ=25°C TJ=125°C 0 5 10 15 20 0 5 10 15 20 VDS, Drain to Source Voltage (V) VGS=10V Low Voltage Output Characteristics 4.5V 5V 0 2 4 6 8 10 12 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) VGS=6, 7, 8 &9V TJ=125°C Normalized RDS(on) vs. Temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID=7A Transfert Characteristics TJ=25°C TJ=125°C 0 2 4 6 8 10 01 23 45 6 VGS, Gate to Source Voltage (V) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle Gate Charge vs Gate to Source VDS=240V VDS=600V VDS=960V 0 2 4 6 8 10 12 0 40 80 120 160 Gate Charge (nC) ID=7A TJ=25°C Ciss Crss Coss 10 100 1000 10000 0 50 100 150 200 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage |
Similar Part No. - APTM120H140FT1G |
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Similar Description - APTM120H140FT1G |
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