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ARF461B Datasheet(PDF) 1 Page - Microsemi Corporation |
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ARF461B Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 250 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. • RoHS Compliant ARF461A(G) ARF461B(G) Common Source Microsemi Website - http://www.microsemi.com Symbol Parameter ARF461AG/BG Unit V DSS Drain-Source Voltage 1000 V V DGO Drain-Gate Voltage 1000 I D Continuous Drain Current @ T C = 25°C 6.5 A V GS Gate-Source Voltage ±30 V P D Total Power Dissipation @ T C = 25°C 250 W R θJC Junction to Case 0.50 °C/W T J, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C T L Lead Temperature: 0.063” from Case for 10 Sec. 300 Symbol Parameter Min Typ Max Unit BV DSS Drain-Source Breakdown Voltage (V GS = 0V, ID = 250 μA) 1000 V V DS(ON) On State Drain Voltage 1 (I D(ON) = 3.25A, VGS = 10V) 6.5 I DSS Zero Gate Voltage Drain Current (V DS = VDSS, VGS = 0V) 25 μA Zero Gate Voltage Drain Current (V DS = 0.8VDSS, VGS = 0, TC = 125°C) 250 I GSS Gate-Source Leakage Current (V DS = ±30V, VDS = 0V) ±100 nA g fs Forward Transconductance (V DS = 25V, ID = 3.25A) 3 4 mhos V GS(TH) Gate Threshold Voltage (V DS = VGS, ID = 50mA) 3 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. TO -24 7 |
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