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2N5015S Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N5015S Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 3 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 T4-LDS-0067 Rev. 1 (082021) Page 1 of 3 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage 2N5010 500 Vdc 2N5011 600 Vdc 2N5012 700 Vdc 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 VCER 1000 Vdc Collector-Base Voltage 2N5010 500 Vdc 2N5011 600 Vdc 2N5012 700 Vdc 2N5013 800 Vdc 2N5014 900 Vdc 2N5015 VCBO 1000 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current IC 200 mAdc Base Current IB 20 mAdc Total Power Dissipation @ TA = +25°C @ TC = +25° C Pt 1.0 7.0 W Thermal Resistance, Junction to Case 1/ RθJC 20 °C/W Operating & Storage Junction Temperature Range Tj, Tstg -65 to +200 °C Note: 1/ See 19500/727 for Thermal Derating Curves. TO-5 2N5010 thru 2N5015 TO-39 2N5010S thru 2N5015S |
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