EM6K6

Transistor

1/3

1.8V Drive Nch+Nch MOSFET

EM6K6

Structure

Dimensions (Unit : mm)

Silicon N-channel

MOSFET

Applications

Switching

Features

1) The MOSFET elements are independent,

eliminating mutual interference.

2) Mounting cost and area can be cut in half.

3) Low on-resistance.

4) Low voltage drive (1.8V) makes this device ideal for

portable equipment.

Packaging specifications

Equivalent circuit

T2R

8000

EM6K6

Type

Package

Code

Basic ordering unit

(pieces)

Taping

Absolute maximum ratings (Ta=25

°C)

<It is the same ratings for the Tr1 and Tr2>

Parameter

V

V

mA

mW / TOTAL

°C

mA

°C

Tch

Tstg

Symbol

20

±8

±300

±600

150

mW / ELEMENT

120

150

−55 to +150

Limits

Unit

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land.

Drain

−source voltage

Gate

−source voltage

Drain current

Total power dissipation

Channel temperature

Storage temperature

Continuous

Pulsed

∗1

∗2

Thermal resistance

Parameter

°C/W / TOTAL

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

833

°C/W / ELEMENT

1042

∗ Each terminal mounted on a recommended land

∗

Abbreviated symbol : K06

EMT6

Each lead has same dimensions

(1)

∗

Gate

Protection

Diode

Tr1

Tr2

Gate

Protection

Diode

∗

∗ A protection diode has been built in between the gate and

the source to protect against static electricity when the product

is in use. Use the protection circuit when rated voltages are exceeded.

(1)Tr1 Source

(2)Tr1 Gate

(3)Tr2 Drain

(4)Tr2 Source

(5)Tr2 Gate

(6)Tr1 Drain

(2)

(3)

(4)

(5)

(6)