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RZE002P02 Datasheet(HTML) 1 Page - Rohm |
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RZE002P02 Datasheet(HTML) 1 Page - Rohm |
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1/4 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A 1.2V Drive Pch MOSFET RZE002P02 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET Features 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive. Applications Switching Package specifications Inner circuit Package Code Taping Basic ordering unit (pieces) RZE002P02 TL 3000 Type Absolute maximum ratings (Ta=25 °C) ∗1 ∗1 Parameter V VDSS Symbol V VGSS mA ID mA IDP IS ISP Limits Unit Drain-source voltage Gate-source voltage Drain current Souce current (Body diode) Continuous Pulsed Continuous Pulsed mA mA ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land −20 ±10 ±200 ±800 ∗2 PD °C Tch °C Tstg Total power dissipation Channel temperature Range of storage temperature 150 −55 to +150 −800 mW 150 −100 Thermal resistance Parameter °C/W Rth(ch-a) Symbol Limits Unit Channel to ambient 833 ∗ Each terminal mounted on a recommended land ∗ (1) Source (2) Gate (3) Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗2 ∗1 (3) (2) (1) (1)Source (2)Gate (3)Drain EMT3 1.6 0.7 0.15 0.55 0.2 1.0 0.3 (2) 0.5 0.5 (3) 0.2 (1) Abbreviated symbol : YK |
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