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2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.A

1.2V Drive Pch MOSFET

RZE002P02

Structure

Dimensions (Unit : mm)

Silicon P-channel MOSFET

Features

1) High speed switching.

2) Small package (EMT3).

3) 1.2V drive.

Applications

Switching

Package specifications

Inner circuit

Package

Code

Taping

Basic ordering unit (pieces)

RZE002P02

TL

3000

Type

Absolute maximum ratings (Ta=25

°C)

∗1

∗1

Parameter

V

Symbol

V

mA

mA

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Souce current

(Body diode)

Continuous

Pulsed

Continuous

Pulsed

mA

mA

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land

−20

±10

±200

±800

∗2

°C

Tch

°C

Tstg

Total power dissipation

Channel temperature

Range of storage temperature

150

−55 to +150

−800

mW

150

−100

Thermal resistance

Parameter

°C/W

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

833

∗ Each terminal mounted on a recommended land

∗

(1) Source

(2) Gate

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2

∗1

(3)

(2)

(1)

(1)Source

(2)Gate

(3)Drain

EMT3

1.6

0.7

0.15

0.55

0.2

1.0

0.3

(2)

0.5

0.5

(3)

0.2

(1)

Abbreviated symbol : YK