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BD7931F Datasheet(PDF) 7 Page - Rohm |
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BD7931F Datasheet(HTML) 7 Page - Rohm |
7 / 9 page BH6578FVM,BD7931F Technical Note 7/8 www.rohm.com 2009.06 - Rev.A © 2009 ROHM Co., Ltd. All rights reserved. (12) IC terminal input The present IC is a monolithic IC and has P + isolation and a P substrate between elements to separate elements. With this P layer and N layer of each element, PN junction is formed, and various parasitic elements are formed. For example, when resistors and transistors are connected to terminals as is the case of Fig.20, where in the case of resistor, the potential difference satisfies the relation of ground (GND)>(terminal A), and in the case of transistor (NPN), the potential difference satisfies the relation of ground (GND)>(terminal B), PN junction works as a diode. Furthermore, in the case of transistor (NPN), a parasitic NPN transistor operates by the N-layer of other elements adjacent to the parasitic diode. The parasitic element is inevitably formed because of the IC construction. The operation of the parasitic element gives rise to mutual interference between circuits and results in malfunction, and eventually, breakdown. Consequently, take utmost care not to use the IC to operate the parasitic element such as applying voltage lower than GND (P substrate) to the input terminal. In addition, when the power supply voltage is not applied to IC, do not apply voltage to the input terminal, either. Similarly, when the power supply voltage is applied, each input terminals shall be the voltage below the power supply voltage or within the guaranteed values of electrical properties. (13) GND wiring pattern If there are a small signal GND and a high current GND, it is recommended to separate the patterns for the high current GND and the small signal GND and provide a proper grounding to the reference point of the set not to affect the voltage at the small signal GND with the change in voltage due to resistance component of pattern wiring and high current. Also for GND wiring pattern of the component externally connected, pay special attention not to cause undesirable change to it. Resistor Transistor(NPN) N N N P + P + P P-sub GND Terminal A N N P + P + P GND C B E N GND E B C GND Parasitic element Fig.20 Example of the basic structure of a bipolar IC Terminal A Terminal B Terminal B Parasitic element Parasitic element Parasitic element P-sub |
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