BC847 datasheet(2/2 Pages) RECTRON

Part #	BC847

Description	NPN Silicon Planar Epitaxial Transistors

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Manufacturer	RECTRON [Rectron Semiconductor]

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BC846

BC847

BC848

MIN TYP MAX

15

4

0.58

0.7

0.77

0.25

0.60

0.7

0.9

90

150

270

110

450

110

800

110

220

200

450

420

800

2.5

100

125

500

125

900

125

260

240

500

450

900

10

BC856

BC857/BC858

| hfe |

DC Current Gain

IC = 10uA, VCE = 5V

BC846A/BC847A/BC848A

BC846B/BC847B/BC848B

BC847C/BC848C

hFE

Collector Emitter Saturation Voltage

VCE(Sat)

IC = 10mA, IB = 0.5mA

UNITS

DESCRIPTION

SYMBOL

IC = 2mA, VCE = 5V

fT

Small Signal Current Gain

Transition Frequency

Base Emitter On Voltage

TEST CONDITION

VBE(on)*

IC = 2mA, VCE = 5V

IC = 10mA, VCE = 5V

Collector Cut Off Current

ICBO

VCB = 30V, IE = 0

nA

VCB = 30V, IE = 0, Tj = 150

oC

uA

IC = 100mA, IB = 5mA

Base Emitter Saturation Voltage

VBE(Sat)***

IC = 10mA, IB = 0.5mA

BC847C/BC848C

BC846B/BC847B/BC848B

BC846A/BC847A/BC848A

IC = 2mA, VCE = 5V, f= 1kHZ

IE = ie = 0, VCB = 10V, f = 1MHZ

pF

BC847/BC848

BC846

*VBE (on) decreases by about 2mV/K with increase temperature.

***VBE (Sat) decreases by about 1.7mV/K with increase temperature.

V

IC = 10mA, VCB = 5V, f = 100MHZ

MHZ

Collector Capacitance

CC

dB

BC846A/BC847A/BC848A

NF

IC = 0.2mA, VCE = 5V

RS= 2k ohm, f = 1KHZ, B= 200HZ

Noise Figure

BC846B/BC847B/BC848B

BC847C/BC848C

Electrical Characteristics (at Ta=25

oC unless otherwise specified)

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