09/18/2007 Rev.1.00

www.SiliconStandard.com

2

Tj=25 C

0

Tj=125 C

0

Tj=75 C

0

FIG.1- MAXIMUM FORWARD CURRENT DERATING

CURVE

0

0

5

1

0

0

1

0

5

10

8

6

4

2

0

FIG.3- MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

1

2

5

10

20

100

50

150

125

100

75

50

25

0

NUMBER OF CYCLES AT 60Hz

TJ=125 C

0

8.3ms Single Half Sine Wave

JEDEC Method

FIG.5- TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

0.2

0.4

1

2

4

10

100

20

40

200

400

INSTANTANEOUS FORWARD VOLTAGE. (V)

FIG.2- TYPICAL REVERSE CHARACTERISTICS

0

20

40

60

80

100

120

140

0.1

0.2

0.4

1

2

4

10

40

100

PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)

FIG.4- TYPICAL JUNCTION CAPACITANCE

0.1

0.5

1

5

10

50

100

500

1000

120

100

80

60

40

20

0

REVERSE VOLTAGE. (V)

Tj=25 C

f=1.0MHz

Vsig=50mVp-p

0

Tj=25 C

Pulse Width=300 s

1% Duty Cycle

o

FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50

W

NONINDUCTIVE

1W

NON

INDUCTIVE

OSCILLOSCOPE

(NOTE 1)

PULSE

GENERATOR

(NOTE 2)

DUT

(+)

50Vdc

(approx)

(-)

NOTES: 1. Rise Time=7ns max. Input Impedance=

1 megohm 22pf

2. Rise Time=10ns max. Sourse Impedance=

50 ohms

(-)

(+)

10

W

NONINDUCTIVE

-1.0A

-0.25A

0

+0.5A

trr

1cm

SET TIME BASE FOR

5/ 10ns/ cm

CASE TEMPERATURE. ( C)

o

FRA801G thru FRA807G