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SS6383B(G)

11/07/2004 Rev.2.01

TEST CIRCUIT

VIN

1

GND

2

VCNTL

3

VOUT

5

VREF

4

SS6383

B

2.5

V

3.3

V

+

10

µF

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

SYMBOL

MIN.

TYP.

MAX.

UNIT

1.6

2.5

6

Input Voltage (DDR1/2)

power on and off sequences

3.0

3.3

6

V

Output Voltage

V

Output Voltage Offset

-20

20

mV

35

45

Load Regulation (DDR1/2)

35

45

mV

Quiescent Current

8

30

µA

3

10

mA

0

1

µA

Current Limit

3.2

4

6.5

A

THERMAL PROTECTION

Thermal Shutdown

Temperature

3.3V

125

150

°C

Thermal Shutdown

Hysteresis

Guaranteed by design

30

°C

SHUTDOWN SPECIFICATIONS

0.8

Shutdown Threshold

0.2

V

Note 3: Load regulation is measured at constant junction temperature, using pulse testing with a low ON time.

Note 4: Current limit is measured by pulsing a short time.

Note 6: Specifications are guaranteed by Statistical Quality Controls (SQC), and not production tested,

within the operating temperature range of -40

°C to 85°C.

Note 7: DDR2 is not supported in the TO-263 package.