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HFB1N70 Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HFB1N70 Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
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2 / 8 page  Electrical Characteristics T C=25 °C unless otherwise specified Symbol Parameter Test Conditions Min TypMax Units y y VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.15 A -- 10.3 14 Ω On Characteristics BV Di S B kd V lt V 0V I 250 ㎂ 700 V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 700 -- -- V Δ BVDSS /ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 ㎂, Referenced to25℃ -- 0.65 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS = 700 V, VGS = 0 V -- -- 1 ㎂ VDS = 560 V, TC = 125℃ -- -- 10 ㎂ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ I Gt Bd L k C t IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 150 195 ㎊ Coss Output Capacitance -- 15 20 ㎊ Crss Reverse Transfer Capacitance -- 3.5 4.5 ㎊ Dynamic Characteristics td(on) Turn-On Time VDS = 300 V, ID = 0.8 A, RG = 25 Ω (Note 4,5) -- 12 30 ㎱ tr Turn-On Rise Time -- 40 140 ㎱ td(off) Turn-Off Delay Time -- 20 60 ㎱ tf Turn-Off Fall Time -- 30 80 ㎱ Qg Total Gate Charge VDS = 560 V, ID = 0.8 A, -- 4.5 6.0 nC Switching Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 0.3 A ISM Pulsed Source-Drain Diode Forward Current -- -- 1.2 VSD Source-Drain Diode Forward Voltage IS = 03A VGS = 0V -- -- 14 V DS D VGS = 10 V (Note 4,5) Qgs Gate-Source Charge -- 1.0 -- nC Qgd Gate-Drain Charge -- 2.5 -- nC Source-Drain Diode Maximum Ratings and Characteristics Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=96mH, IAS=0.8A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤0.3A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4P l T t P l Width ≤ 300 Dt C l ≤ 2% VSD Source Drain Diode Forward Voltage IS 0.3 A, VGS 0 V 1.4 V trr Reverse Recovery Time IS = 0.8 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 160 -- ㎱ Qrr Reverse Recovery Charge -- 0.45 -- μC ◎ SEMIHOW REV.A0,Apr 2006 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature |
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