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1N4148 Datasheet(HTML) 3 Page - NXP Semiconductors |
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1N4148 Datasheet(HTML) 3 Page - NXP Semiconductors |
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2004 Aug 10 3 NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF continuous forward current see Fig.2; note 1 − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 4 A t = 1 ms − 1 A t = 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 500 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 1N4148 IF = 10 mA − 1 V 1N4448 IF = 5 mA 0.62 0.72 V IF = 100 mA − 1 V IR reverse current VR = 20 V; see Fig.5 25 nA VR = 20 V; Tj = 150 °C; see Fig.5 − 50 µA IR reverse current; 1N4448 VR = 20 V; Tj = 100 °C; see Fig.5 − 3 µA Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.6 − 4 pF trr reverse recovery time when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 50 mA; tr = 20 ns; see Fig.8 − 2.5 V THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board without metallization pad. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W |
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