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2PA1576 Datasheet(PDF) 3 Page - NXP Semiconductors |
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2PA1576 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page  2PA1576_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 17 November 2009 3 of 7 NXP Semiconductors 2PA1576 PNP general-purpose transistor 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. Table 6. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current IE =0 A; VCB = −30 V - - −100 nA IE =0 A; VCB = −30 V; Tj = 150 °C -- −5 μA IEBO emitter-base cut-off current IC =0 A; VEB = −4V - - −100 nA hFE DC current gain IC = −1mA; VCE = −6V 2PA1576Q 120 - 270 2PA1576R 180 - 390 2PA1576S 270 - 560 VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −5mA [1] -- −500 mV Cc collector capacitance IE =ie =0 A; VCB = −12 V; f = 1 MHz -2.5 3.5 pF fT transition frequency IC = −2mA; VCE = −12 V; f = 100 MHz 100 --MHz |
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