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74ABT16244A Datasheet(PDF) 5 Page - NXP Semiconductors

Part # 74ABT16244A
Description  16-bit buffer/line driver; 3-state
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74ABT16244A Datasheet(HTML) 5 Page - NXP Semiconductors

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74ABT16244A_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 23 March 2009
5 of 13
NXP Semiconductors
74ABT16244A
16-bit buffer/line driver; 3-state
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability.
8.
Recommended operating conditions
9.
Static characteristics
Table 5.
Operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
4.5
-
5.5
V
VI
input voltage
0
-
VCC
V
VIH
HIGH-level input voltage
2.0
-
-
V
VIL
LOW-level Input voltage
-
-
0.8
V
IOH
HIGH-level output current
−32
--mA
IOL
LOW-level output current
-
-
64
mA
∆t/∆V
input transition rise or fall rate
-
-
10
ns/V
Tamb
ambient temperature
in free air
−40
-
+85
°C
Table 6.
Static characteristics
Symbol
Parameter
Conditions
25
°C
−40 °C to +85 °C Unit
Min
Typ
Max
Min
Max
VIK
input clamping voltage VCC = 4.5 V; IIK = −18 mA
-
−0.9 −1.2
-
−1.2
V
VOH
HIGH-level output
voltage
VI = VIL or VIH
VCC = 4.5 V; IOH = −3 mA
2.5
2.9
-
2.5
-
V
VCC = 5.0 V; IOH = −3 mA
3.0
3.4
-
3.0
-
V
VCC = 4.5 V; IOH = −32 mA
2.0
2.4
-
2.0
-
V
VOL
LOW-level output
voltage
VCC = 4.5 V; IOL =64mA;
VI =VIL or VIH
-
0.42
0.55
-
0.55
V
II
input leakage current
VCC = 5.5 V; VI = GND or 5.5 V
-
±0.01 ±1.0
-
±1.0
µA
IOFF
power-off leakage
current
VCC = 0 V; VI or VO ≤ 4.5 V
-
±5.0 ±100
-
±100
µA
IO(pu/pd)
power-up/power-down
output current
VCC = 2.0 V; VO = 0.5 V;
VI = GND or VCC; nOE=VCC
[1]
-
±5.0
±50
-
±50
µA
IOZ
OFF-state output
current
VCC = 5.5 V; VI = VIL or VIH
output HIGH-state at VO = 5.5 V
-
0.1
10
-
10
µA
output LOW-state at VO = 0 V
-
−0.1
−10
-
−10
µA
ILO
output leakage current HIGH-state; VO = 5.5 V;
VCC = 5.5 V; VI = GND or VCC
-
5.0
50
-
50
µA
IO
output current
VCC = 5.5 V; VO = 2.5 V
[2]
−50 −100 −180
−50
−180
mA
ICC
supply current
VCC = 5.5 V; VI = GND or VCC
outputs HIGH-state
-
0.45
1.0
-
1.0
mA
outputs LOW-state
-
10
19
-
19
mA
outputs 3-state
-
0.45
1.0
-
1.0
mA


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