74AUP2G00GD datasheet(9/17 Pages) NXP

Part #	74AUP2G00GD

Description	Low-power dual 2-input NAND gate

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Manufacturer	NXP [NXP Semiconductors]

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74AUP2G00_4

Product data sheet

Rev. 04 — 5 June 2008

9 of 17

NXP Semiconductors

74AUP2G00

Low-power dual 2-input NAND gate

[1]

All typical values are measured at nominal VCC.

[2]

tpd is the same as tPLH and tPHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

2

× f

o) = sum of the outputs.

12. Waveforms

CL = 5 pF, 10 pF, 15 pF and 30 pF

CPD

power dissipation

capacitance

fi = 1 MHz;

VI = GND to VCC

[3]

VCC = 0.8 V

-

2.8

-

pF

VCC = 1.1 V to 1.3 V

-

2.9

-

pF

VCC = 1.4 V to 1.6 V

-

3.0

-

pF

VCC = 1.65 V to 1.95 V

-

3.0

-

pF

VCC = 2.3 V to 2.7 V

-

3.4

-

pF

VCC = 3.0 V to 3.6 V

-

3.9

-

pF

Table 8.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.

Symbol Parameter

Conditions

Tamb = 25 °C

Tamb = −40 °C to +125 °C

Unit

Min

Typ[1]

Max

Min

Max

(85

°C)

Max

(125

°C)

Measurement points are given in Table 9.

Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.

Fig 8.

The data input (nA or nB) to output (nY) propagation delays

001aae972

nA, nB input

nY output

tPLH

tPHL

GND

VI

VM

VOH

VOL

Table 9.

Measurement points

Supply voltage

Output

Input

VCC

VM

VI

tr = tf

0.8 V to 3.6 V

0.5

× V

CC

0.5

× V

CC

VCC

≤ 3.0 ns

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