BC637_BCP55_BCX55_7

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 07 — 25 June 2007

4 of 15

NXP Semiconductors

BC637; BCP55; BCX55

60 V, 1 A NPN medium power transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

[3]

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

60

V

collector-emitter voltage

open base

-

60

V

emitter-base voltage

open collector

-

5

V

collector current

-

1

A

peak collector current

single pulse;

-

1.5

A

peak base current

single pulse;

-

0.2

A

total power dissipation

BC637

[1] -

0.83

W

BCP55

[1] -

0.64

W

[2] -

0.96

W

BCX55

[1] -

0.5

W

[2] -

0.85

W

[3] -

1.25

W

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C