BC846BPN_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 17 July 2009

3 of 15

NXP Semiconductors

BC846BPN

65 V, 100 mA NPN/PNP general-purpose transistor

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

-

80

V

collector-emitter voltage

open base

-

65

V

emitter-base voltage

open collector

-

6

V

collector current

-

100

mA

peak collector current

single pulse;

-

200

mA

peak base current

single pulse;

-

200

mA

total power dissipation

[1] -

200

mW

Per device

total power dissipation

[1] -

300

mW

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

FR4 PCB, standard footprint

Fig 1.

Per device: Power derating curve SOT363 (SC-88)

−75

175

125

25

75

−25

006aab618

200

300

100

400

500

(mW)

0