BC848B datasheet(4/12 Pages) NXP

Part #	BC848B

Description	30 V, 100 mA NPN general-purpose transistors

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Manufacturer	NXP [NXP Semiconductors]

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BC848_SER_7

Product data sheet

Rev. 07 — 17 November 2009

4 of 12

NXP Semiconductors

BC848 series

30 V, 100 mA NPN general-purpose transistors

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

[2]

VBEsat decreases by approximately 1.7 mV/K with increasing temperature.

[3]

VBE decreases by approximately 2 mV/K with increasing temperature.

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =30V; IE =0A

-

15

nA

VCB =30V; IE =0A;

Tj = 150 °C

--

5

μA

IEBO

emitter-base cut-off

current

VEB =5V; IE = 0 A

-

100

nA

hFE

DC current gain

VCE =5V; IC =10 μA-

150

-

VCE =5V; IC =2mA

BC848B

200

290

450

BC848W

110

-

800

VCEsat

collector-emitter

saturation voltage

IC =10mA; IB = 0.5 mA

-

90

250

mV

IC = 100 mA; IB =5mA

[1] -

200

600

mV

VBEsat

base-emitter

saturation voltage

IC =10mA; IB =0.5 mA

[2] -700

-

mV

IC = 100 mA; IB =5mA

[2] -900

-

mV

VBE

base-emitter voltage

IC =2mA; VCE =5 V

[3] 580

660

700

mV

IC =10mA; VCE =5V

[3] -

-

770

mV

fT

transition frequency

VCE =5V; IC =10 mA;

f = 100 MHz

100

-

MHz

Cc

collector capacitance VCB =10V; IE =ie =0A;

f= 1MHz

-2.5

3

pF

NF

noise figure

VCE =5V; IC =200 μA;

RS =2kΩ; f = 1 kHz;

B=200 Hz

-

2

10

dB

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